DDR 测试、验证和调试

DDR 内存接口

新一代内存技术(如 DDR4 和 LPDDR4)带来了更快的速度、更低的 I/O 电压和各种外形,可满足不同的应用需求。结果产生了新的调试和验证挑战,包括更紧凑的余量、更快的边沿速率和复杂的总线协议。


  • DDR 电气验证:
    捕获、测量和检定 DDR 内存接口信号行为、抖动、眼图大小、串扰、选通/时钟对准、误码。
  • DDR 逻辑验证:
    捕获和测量 DDR 内存接口的数字逻辑状态,执行总线周期的定时和协议分析。


DesignCon 2015 Paper - Designing High Performance Interposers with 3-port and 6-port S-parametersThis technical paper explains how multiport S-parameters can be used to validate memory interposer design cases. This helps memory designers understand some of the performance characteristics that can be inferred from S-parameters, as well as some of the interactions between the interposer and the device under test and probing system; leading to more accurate validation efforts on very fast memory systems utilizing DDR4 or LPDDR4.

The NEW P7700 Series TriMode Probe provides the highest probe fidelity available…


The Tektronix P7700 TriMode Probe supports solder connections to a device under…

New Characterization Techniques for DDR4/LPDDR4 and Next Generation Memory Standards
This webinar provides an update on the latest characterization and debug techniques to enable analysis of the highest DDR4/LPDDR4 speed grades (DDR4-3200/LPDDR4-4266).  
Efficiently Design and Electrically Validate a DDR4 Interface

This webinar will show how Cadence and Tektronix can enable you with flexible and power efficient DDR4 IP, design and analysis tools used in the office, and lab-based solutions to address the key challenges in electrical validation of the DDR4 interface.

Memory Interface Verification and Debug

This webinar will explain how to prepare for next generation DDR-based memory testing. Learn about the changes these new standards bring to electrical verification and how to prepare for proper signal access to LPDDR3 and DDR4 memory systems. Get advance knowledge to plan for proper instrument selection needed for performing electrical verification tests on these emerging standards.

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