Transitioning from silicon to wide bandgap semiconductors such as silicon carbide and gallium nitride means that power module designs can be physically smaller than what came before, while also increasing MOSFET switching speed and energy efficiency. As competitive pressures make these design parameters more critical, design engineers must reevaluate their approaches to validation and testing.
Make I-V and C-V Measurements up to 2X Faster with the 4200A-SCS Parameter Analyzer8/31/2020
Measuring new materials or devices? Watch how you can get insights faster-than-ever with hassle-free connections, faster test setup, and built-in test libraries and learning tools. See how to gain complete confidence in the measurements you’re making, whether for device design and reliability, electrochemistry or failure analysis testing.
This webinar presents a new process that makes characterization and parameter extraction easier and quicker. We'll be discussing the extraction of common parameters as well as which tests to run to get the most information about your device.