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半导体测试系统

解决方案简介

为新一代电力电子设计改进材料和测试

8/31/2020

Transitioning from silicon to wide bandgap semiconductors such as silicon carbide and gallium nitride means that power module designs can be physically smaller than what came before, while also increasing MOSFET switching speed and energy efficiency. As competitive pressures make these design parameters more critical, design engineers must reevaluate their approaches to validation and testing.

在线研讨会
Tips and Techniques to Simplify MOSFET-MOSCAP Device Characterization

Tips and Techniques to Simplify MOSFET-MOSCAP Device Characterization

8/31/2020

This webinar presents a new process that makes characterization and parameter extraction easier and quicker. We'll be discussing the extraction of common parameters as well as which tests to run to get the most information about your device.