信号发生器
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解决方案简介
为新一代电力电子设计改进材料和测试
8/31/2020Transitioning from silicon to wide bandgap semiconductors such as silicon carbide and gallium nitride means that power module designs can be physically smaller than what came before, while also increasing MOSFET switching speed and energy efficiency. As competitive pressures make these design parameters more critical, design engineers must reevaluate their approaches to validation and testing.
视频
Conquering Radar Signal Generation
8/31/2020Let us help you decode radar signal generation with our informative webinar.