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产品技术资料 文献编号： 发布日期 4200A-SCS参数分析仪技术资料
亲眼见证创新！4200A-SCS是一种可以量身定制、全面集成 的参数分析仪，可以同步查看电流电压 (I-V)、电容电压 (C-V) 和超快速脉冲式I-V特性。作为性能最高的参数分析仪， 4200A-SCS 加快了半导体、材料和工艺开发速度1KC-60780-6
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技术文档 文档类型 发布日期 使用4215-CVU测量 fF (1e-15F) 电容
应用指南 在高测试连接电容情况下使用 4201-SMU和 4211-SMU
应用指南 使用4200A-CVIV多开关和4200A-SCS参数分析仪在C-V测量和I-V测量之间切换 - NEW
应用指南 使用4200A-SCS参数分析仪进行范德堡和霍尔电压测量 - NEW
应用指南 使用吉时利Model 4200-SCS参数分析仪进行晶圆级可靠性测试
应用指南 有机FET的 DC I-V和AC 阻抗测试
本技术指南概括介绍怎样使用4200A-SCS参数分析仪优化OFET的DC I-V和AC阻抗测量。讨论定时参数、降噪、屏蔽、正确布线及实现最佳效果的其他重要测量考虑因素。应用指南 使用4200A-CVIV开关的偏置能力进行三端器件高达400 V电压的电容测试
应用指南 使用 4200A-SCS 参数分析仪测量 MOSFET 栅极电荷
简介 功率 MOSFET 用途广泛，可用作高速开关。器件的开关速度受内部电容的影响，内部电容在数据表中通常以 Ciss 和 Coss 表示，它们是由输入栅极和漏极电容 Cgs 和 Cgd 得出。除了指定电容外，栅极电荷（Qgs 和 Qgd）也可用于评估 MOSFET 的开关性能。 JEDEC JESD24-2 标准“栅极电荷测试方法”中介绍了测量 MOSFET 栅极电荷的一种方法。在这种方法中，在测量栅源电压与时间的函数关系时，会强制施加栅极电流。根据由此产生的栅极电压波形 …应用指南 MOSFET Gate Charge Measurement with a 4200a-SCS Parameter Analyzer
Understanding MOSFET Gate Charge and Its Importance Power MOSFETs are used in a variety of applications and can be used as high-speed switching. The switching speed of the device is affected by internal capacitances, which is typically specified in …应用指南 1 ns Pulsing Solutions for Non-Volatile Memory Testing
Until recently, floating gate (FG) NAND flash memory technology has been successful in meeting the demand for non-volatile memory (NVM) devices for tablets and smartphones. However, there is increasing concern in the …技术简介 Using the 4200A-CVIV Multi-Switch to Make High Voltage and High Current C-V Measurements
This application note explains the implementation of the bias tee modes of the 4200A-CVIV to make high voltage C-V measurement. It assumes the reader is familiar with making C-V measurements with the Keithley 4200A-SCS using the CVIV.应用指南 Making Stable Low Current Measurements with High Test Connection Capacitance Using the 4201-SMU and 4211-SMU
Introduction The source measure unit (SMU) is an instrument that can source current or voltage, and measure both current and voltage. The SMU is used for I-V characterization of a wide variety of devices and materials, and is designed …应用指南 Making Low Current Pulse I-V Measurements
This application note defines ultra-fast I-V, explains the fundamental limits of current measurements as a function of time and measure window, and describes the techniques for making ultra-fast I-V low current measurements.应用指南 Making Optimal Capacitance and AC Impedance Measurements with the 4200A-SCS Parameter Analyzer
Introduction Capacitance-voltage (C-V) and AC impedance measurements are commonly performed on many types of devices for a wide variety of applications. For example, C-V measurements are used to determine these device parameters: Gate oxide …应用指南
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软件 文档类型 部件号： 发布日期 4200A-SCS Clarius+ Software Suite V1.14
This version of Clarius+ is only supported on Microsoft Windows 10. If installed on the 4200A-SCS system with a Clarius+ release prior to V1.4, contact Keithley, a Tektronix company, at tek.com to upgrade the parameter analyzer.If installing on a …应用 4200A-CLARIUS-V1.14 4200A-SCS Clarius+ Software Suite V1.13
This version of Clarius+ is only supported on Microsoft Windows 10. If installed on the 4200A-SCS system with a Clarius+ release prior to V1.4, contact Keithley, a Tektronix company, at tek.com to upgrade the parameter analyzer. If installing on a …应用 4200A-CLARIUS-V1.13 4200A-SCS Clarius+ Software Suite V1.3 (Legacy – Unsupported)
This legacy version of Clarius is made available for Windows 7 computers. For the latest version of Clarius+ please visit the 4200A-SCS Product Support page ( Product Support and Downloads | Tektronix ) and select Software. The 4200A-SCS Clarius+ …应用 4200A-CLARIUS-V1.3
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常见问题 常见问题 ID How can I measure hall mobility of 2D materials?
Hall mobility, or electron mobility, of a 2D material is best measured by utilizing the Hall effect. There are several different Keithley solutions for making Hall effect measurements. A Keithley 4200A-SCS Parameter Analyzer with 4 Source Measure …71221