功率半导体器件测试

This white paper describes the theory of operation and performance capabilities of an optically isolated measurement system that offers complete galvanic isolation to accurately resolve high bandwidth …

本文章主要介绍使用IsoVu 测量系统进行精确的高侧 VGS 测量

Measuring breakdown parameters is increasingly required to predict a device’s safe region of operation. Sometimes, those breakdown conditions in reliability testing and breakdown test occur as a …

Double pulse testing is useful for measuring switching parameters and evaluating the dynamic behavior of power semiconductor devices such as MOSFETs and IGBTs. The test can be used to measure energy …

Introduction Source-measure units (SMUs), such as the Keithley Model 2651A High Power System SourceMeter instrument, are the most flexible and most precise equipment for …

Wide Bandgap power devices (SiC and GaN) offer significant benefits and are smaller, faster and more efficient than their silicon counterpart. But they also present several validation challenges …

Watch this webinar to get tips for measuring 2- and 3-terminal semiconductor devices and for using source measure unit instruments during the design process.

This webinar presents techniques for high power characterization of Silicon Carbide (SiC) and Gallium Nitride (GaN) components. We look at power levels as high as 2000W and electrical levels of up to …